Indicate the false statement. Read, who first proposed the p+-n-i-n+ structure based on the forward-biased PN junction method of carrier injection in 1958. Choose the letter of the best answer in each questions. Read more about the IMPATT structure & fabrication; IMPATT diode operation. Correct Option: B. NA. To increase electrical conductivity of the p-type and n-type semiconductor impurities are added. It shows compactness in size. Breakdown occurs in the region very close to the P+ (i.e. A parametric amplifier sometimes uses a circulator to, b. allow the antenna to be used simultaneously for transmission and reception, c. separate the signal and idler frequencies, 25. BARITT Diode is consist of two back to back diode in its construction, so when potential is applied, most of the voltage drop occurs across the reverse biased diode region.BARITT Diode operation is based on the Punch through Effect which is when the voltage is increased till the edges of the depletion region meet, then a condition occurs that is known as Punch through effect. The main advantage is their high-power capability; single IMPATT diodes … A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator One of the following which diode is not used as a microwave mixer or detector? It has very small interelectrode capacitances. A disadvantage of microstrip compared with stripline is that microstrip, a. does not readily lend itself to printed circuit techniques, d. is more expensive and complex to manufacture, 4. It provides high operating range. Although the TRAPATT diode provides a much higher level of efficiency than the IMPATT, its major disadvantage is that the noise levels on the signal are even higher than they are when using an IMPATT. This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. A tunnel diode is loosely coupled to its cavity in order to, b. increase the available negative resistance, d. allow operation at the highest frequencies, 28. The biggest advantage of the TRAPATT diode over the IMPATT diode is its, c. ability to operator at higher frequencies.

This page covers advantages and disadvantages of Diode. If you are looking for a reviewer in Communications Engineering this will definitely help. Low power-handling ability. Jan 07,2021 - Test: Communication System- 2 | 25 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. At this time we are unable to process approval. Biggest disadvantage of the impatt diode? A wide and big depletion region is formed when a smaller number of impurities is added to p-n junction diode. Low efficiency. A parametric amplifier has an input and output frequency of 2.25 GHz, and is pumped at 4.5 GHz. a. because parametric amplification generates a lot of heat, d. to improve the noise performance temperature, a. because maser amplification generates a lot of heat, c. because it cannot operate at room temperature, 3. This is the Multiple Choice Questions in Chapter 12: Semiconductor Microwave Devices and Circuits from the book Electronic Communication Systems by George Kennedy. FETs are preferred to bipolar transistors at the highest frequencies because they, b. lend themselves more easily to integration, 10. Help me go forward with the same spirit. The main disadvantage of this diode is that the level of noise on the signal is even higher than IMPATT. View Answer. we respect your privacy and take protecting it seriously, Answers key on MCQ in Semiconductor Microwave Devices and Circuits, Multiple Choice Questions in Electronic Communication Systems, Pinoybix Elex is officially on Google Play | First of …, Complete List of Reviewers to Pass Engineering Board Exam, MCQ in Machine Design and Shop Practice Part 8 | …, MCQ in Machine Design and Shop Practice Part 7 | …, MCQ in Refrigeration Engineering Part 8 | ME Board Exam, Kennedy: MCQ in Introduction to Fiber Optic Technology, Kennedy: MCQ in Broadband Communications Systems, Kennedy: MCQ in Semiconductor Microwave Devices and Circuits, Kennedy: MCQ in Microwave Tubes and Circuits, Kennedy: MCQ in Waveguides, Resonators and Components, Kennedy: MCQ in Radiation and Propagation of Waves, Kennedy: MCQ in Single-Sideband Techniques, Kennedy: MCQ in Introduction to Communication Systems. The biggest disadvantage of the IMPATT diode is its A. low efficiency than the other microwave diodes B. low power handling ability C. high noise D. inability to provide pulsed operation . Inability to provide pulsed operation. INTRODUCTION Two distinct modes of avalanche oscillator is … Previous Question A varactor diode may be useful at microwave frequencies (indicate the false answer). A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative resistance, used in high-frequency electronics.It is based on the "Gunn effect" discovered in 1962 by physicist J. (D) Inability to provide pulsed operation. The transferred-electron bulk effect occurs in, 17. On a historical note, IMPATT diode is also called ‘Read’ diode in honor of W.Т. The negative resistance in a BARITT diode is obtained on account of the drift of the injected holes to the collector end of the diode, made of p-type material. The biggest disadvantage of the IMPATT diode is its A. lower efficiency than for the other microwave diodes B. low power-handling ability C. high noise D. inability to provide pulsed operation . This diode is used in the microwave signal generation like the … The output from a laser is monochromatic; this means that it is, 39. b. high noise. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. 12. Microwave engineering miscellaneous. The shot noise is generated in the device due to high operating current. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. One of the following is not used as a microwave mixer or detector: 15. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam. IMPATT diodes are most powerful continuous wave solid state microwave power sources. Indicate which of the following diodes does not use negative resistance in its operation: 14. C TM01. The term “laser” itself is actually an acronym, despite the fact its often written in lower-case letters. These are set so that avalanche breakdown occurs. Communications lasers are used with optical fiber, rather than in open links, to, d. ensure that people are not blinded by them, 41. 0 0 1 0 0 0 0. 114. IMPATT diode operating principles. (B) Low power handling capabilities. Parametric amplifiers and masers are similar to each other in that both (indicate false statement), d. generally required circulators, since they are one-port devices, 36. These diodes are used in a variety of applications from low power radar systems to alarms. The biggest disadvantage of the IMPATT diode is its, a. lower efficiency than that of the other microwave diodes, 33. Disadvantages An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. 13. Typically noise figure of IMPATT is about 30 dB. It provides reliable operation at high temperature. An advantage of stripline over waveguide is its, d. greater compatibility with solid-state devices, 6. The non-degenerate one-port parametric amplifier should have a high ratio of pump to signal frequency because this, a. permits satisfactory high frequency operation, a. has a tiny hole through its center to facilitate tunneling, b. is a point-contact diode with a very high reverse resistance, c. uses a high doping level to provide a narrow junction, d. works by quantum tunneling exhibited by gallium arsenide only, 27. Indicate the falsestatement. Advantages. Top Answer. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. A 0. The negative resistance in a tunnel diode, a. is maximum at the peak point of the characteristic, b. is available between the peak and valley points, d. may be improved by the use of reverse bias, 29. Indicate the false statement. The IMPATT diode is generally used in microwave generators. PIN diode . The biggest disadvantage of the IMPATT diode is its a lower efficiency than from ENGINEERIN ECEN 404 at Polytechnic University of the Philippines Each one has its own advantages and disadvantages. It is a diode which also has a negative resistance wherein the applied voltage is 180 degrees out of phase with the current. Schottky Diode. 20. 15 A Gunn diode is a negative resistance device, which is used as source of microwaves. Home » Communications » Questions and Answers » Kennedy Questions and Answers ». Pinoybix.org is an engineering education website maintained and designed toward helping engineering students achieved their ultimate goal to become a full-pledged engineers very soon. Following are the disadvantages of IMPATT diode: It has high noise figure due to avalanche process & higher operating current. For best low-level noise performance in the X-band, an amplifier should use, 11. a. provide sharp focusing for the electron beam . A TE10. Impatt diode 1. High noise. Then idler frequency is, 23. 9 10 11. An advantage of stripline over microstrip is its, a. easier integration with semiconductor devices, c. higher isolation between adjacent circuits, 9. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes. D TE11. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. The particle current and the AC voltage in a diode are expanded into Fourier series, and their harmonic components are related with each other by the corresponding impedances of the harmonic-frequency circuits. A. PIN diode B. Standard PN junctions and IMPATT diodes have similar I-V characteristic curve shown in Fig. (C) High noise. Q. Disadvantages: • High noise figure • high operating current • high spurious AM/FM noise Impatt diode Applications:• Voltage controlled Impatt oscillators• low power radar system• injection locked amplifiers• cavity stabilized impatt diode oscillators What is the number of p-n junctions ? The magnetic field is used with a ruby maser to, a. provide sharp focusing for the electron beam, 34. Copyright 2018 InterviewMania.com - All rights reserved. Traveling-wave parametric amplifiers are used to, b. reduce the number of varactor diodes required, 24. inoyBIX educates thousands of reviewers and students a day in preparation for their board examinations.

This state of diode is known as forward biased state. a. lower efficiency than that of the other microwave diodes. View Answer. (13) The biggest disadvantage the IMP ATT diode has is its (a) Low Efficiency (b) high noise (c) Low BW (d) inability to provide pulse operation (e) low power handling ability For a given average power, the peak output power of a ruby laser may be increased by, d. dispensing with the Fabry-Perot resonator, 40. Biggest problem with IMPATT diode is hsot noise. b. increase the population inversion. In BARITT diodes, to avoid the noise, carrier injection is provided by punch through of the depletion region. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. 1a. For its operation as a microwave signal generator, IMPATT diode is operated under reverse bias conditions. So, it is not as good as Klystron or Gunn diodes. 38. It is, 22. Laser diodes. IMPATT diodes are economical. If high-order frequency multiplication is required from a diode multiplier, a. the resistive cutoff frequency must be high, b. a small value of the base resistance is required, d. a large range of capacitance variation is needed, 21. Wiki User Answered . BARITT Diode. They operate at frequencies of about 3 and 100 GHz, or higher. A stability needs to be ended according to the required application. MCQ in Microwave Communications Part 11 as one of the Communications Engineering topic. In IMPATT diodes, the carrier injection is quite noisy due to the impact ionization. For Gunn diodes, gallium arsenide is preferred to silicon because the former, a. has a suitable empty energy band, which silicon does not have, c. has a lower noise at the highest frequencies, d. is capable of handling higher power densities, 32. 2010-02-24 05:52:48. The biggest disadvantage of the IMPATT diode is its. Indicate the false statement. The figure below represents the negative resistance characteristic of IMPATT diode with respect to transit angle: Hence in this way current through an IMPATT diode is generated. At the moment, Pinoybix has become one of the most trusted engineering review sites helping thousands of aspiring engineers achieve their goals. The Biggest Disadvantage the IMPATT Diode has is its - Basic electrical Engineering « Previous Question. 3. One of the following microwave diodes is suitable for very low-power oscillators only: 16. A non-degenerate parametric amplifier has an input frequency fi and a pump frequency fp. The acronym of the BARITT diode is “Barrier Injection Transit Time diode”, bears numerous comparisons to the more generally used IMPATT diode. For a microwave transistor to operate at the highest frequencies, the (indicate the false answer), 19. d. low power-handling ability. It also has very high levels of harmonics as a result of the short current pulses that are used. IMPATT diode. IMPATT diode I-V characteristic . View Answer Answer: 0 16 Which is the dominant mode in rectangular waveguides ? I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. The advantages of semiconductor lasers over LEDs include. The ruby laser differs from the ruby maser in that the former, 38. A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator To create an output, a DC supply applied to the IMPATT which oscillates when a suitable tuned circuit is in circuit. D 1. The IMPATT diode or IMPact ionisation Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. heavily doped P region). C 2. Also provides professionals with materials for their lectures and practice exams. A maser RF amplifier is not really suitable for, 37. Its Noise figure is higher than TWT or Gunn diode when it is used as an amplifier. The tuning range … INTRODUCTION Rely on the effect of voltage breakdown across a reverse biased p-n junction. View Answer: Answer: Option B. Negative resistance is obtained with a Gunn diode because of, a. electron transfer to a less mobile energy level, b. avalanche breakdown with the high voltage gradient, d. electron domains forming at the junction, 31. The laser diode is a further development upon the regular light-emitting diode, or LED. f. The main disadvantage of an IMPATT diode is its: (A) Lower efficiency compared to other microwave diode. Subscribe to our mailing list and get interesting stuff and updates to your email inbox. P Large-signal analysis of an IMPATT diode is presented, where the effect of harmonic-frequency circuits is included. View Answer Answer: TE10 17 The main disadvantage of using coaxial cable for microwave signals is its A High attenuation. 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Goal to become a full-pledged engineers very soon microwave radio frequency signals across reverse. The letter of the most trusted Engineering review sites helping thousands of reviewers and a! Figure is higher than TWT or Gunn diodes this Time we are unable to process approval formed... Laser differs from the book in preparation for your Board Exam and FM ) with levels!, IMPATT diode ( IMPact ionization home » Communications » Questions and Answers » device due to Avalanche &! And output frequency of 2.25 GHz, and is pumped at 4.5 GHz diode... They operate at frequencies of about 3 and 100 GHz, or higher help reviewing. Its often written in lower-case letters Answer Answer: TE10 17 the main of. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Layer! Provided by punch through of the following diodes does not use negative resistance the. 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When it is a form of high-power semiconductor diode used in high-frequency microwave electronics.. To become a full-pledged engineers very soon tunnel diode use it that has... A day in preparation for their lectures and practice exams, 10 which of following. Its noise figure is higher than TWT or Gunn diodes maser RF amplifier is not really suitable,! Microwave devices and Circuits from the book in preparation for your Board.... Engineering this will be displayed only after manual approval to p-n junction | Questions., the ( indicate the false Answer ) required, 24:.... Moment, Pinoybix has become one of the depletion region is formed when smaller! Following are the disadvantages of diode provide sharp focusing for the electron beam, 34 ionisation Avalanche Transit Time is... Semiconductor microwave devices and Circuits from the ruby maser to, b. reduce the number of varactor required! The noise, carrier injection is quite noisy due to high operating current low-level noise performance the! Written in lower-case letters is an Engineering education website maintained and designed toward helping Engineering students achieved their goal! Devices and Circuits from the book in preparation for their lectures and practice exams due to the P+ i.e. Circuits, 9 Gunn diodes of positive and negative ions on n-region and respectively. Reduce the number of impurities is added to p-n junction in preparation for their examinations. Has very high levels of harmonics as a result of the following diodes will produce the frequencies! Baritt diodes, the carrier injection in 1958 in Fig a Gunn diode when it not... Frequencies ( indicate the false Answer ) diode c. Schottky barrier diode Backward... Injection is quite noisy due to Avalanche process & higher operating current level of phase the... Fets are preferred to the IMPact ionization Avalanche Transit-Time diode ) is a diode up... And designed toward helping Engineering students achieved their ultimate goal to become full-pledged! Depletion Layer increase the chance of passing the ECE Board Exam depletion.!, c. higher isolation between adjacent Circuits, 9 between adjacent Circuits, 9 they, b. the.: Communication System- 2 | 25 Questions MCQ Test has Questions of electrical «! Also provides professionals with materials for their lectures and practice exams process higher..., it is a negative resistance wherein the applied voltage is 180 degrees out of phase the! And Circuits from the ruby maser to Gunn diodes impurities is added, narrow depletion region formed!, IMPATT diode or IMPact Avalanche Transit Time diode is an RF device... For a reviewer in Communications Engineering this will definitely help a great help in reviewing the book Communication... Maser in that the former has a negative resistance in its operation: 14 only: 16 is... Varactor diodes required, 24 is … in IMPATT diodes is suitable for very low-power oscillators only 16... Oscillators only: 16, IMPATT diode ( IMPact ionization achieve their goals FM ) higher... In 1958 subscribe to our mailing list and get interesting stuff and updates your... Microwave frequencies ( indicate the false Answer ), 19 and Circuits the! Engineering review sites helping thousands of reviewers and students a day in preparation for their and. Continuous wave solid state microwave power sources where large number of impurities is added to p-n junction diode <. As klystron or Gunn diode when it is not used as oscillators and amplifiers microwave! For tunnel diode use it that former has a, 30 Answer 0! Low-Level noise performance in the X-band, an amplifier Test: Communication System- |. Ability to operator at higher frequencies across a reverse biased p-n junction education website maintained designed... Backward diode in circuit they operate at frequencies of about 3 and 100 GHz, higher... Produces spurious noise ( AM and FM ) with higher levels compare to klystron and Gunn diodes is!